New Hybrid Memory Cube Spec to Boost DRAM Bandwidth by 15X
April 4th, 2013Via: Computer World:
Backed by 100 tech companies, the three largest memory makers announced the final specifications for three-dimensional DRAM, which is aimed at increasing performance for networking and high performance computing markets.
Micron, Samsung and Hynix are leading the technology development efforts backed by the Hybrid Memory Cube Consortium (HMC). The technology, called a Hybrid Memory Cube, will stack multiple volatile memory dies on top of a DRAM controller.
The DRAM is connected to the controller by way of the relatively new silicon VIA (Vertical Interconnect Access) technology, a method of passing an electrical wire vertically through a silicon wafer.
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The first Hybrid Memory Cube specification will deliver 2GB and 4GB of capacity, providing aggregate bi-directional bandwidth of up to 160GBps compared with DDR3’s 11GBps of aggregate bandwidth and DDR4, with 18GB to 20GB of aggregate bandwidth, Black said.
